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Influence of the Fringe Fields in Microchannel Amplifiers Design

Received: 7 November 2017     Accepted: 16 November 2017     Published: 14 December 2017
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Abstract

Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.

Published in American Journal of Modern Physics (Volume 7, Issue 1)
DOI 10.11648/j.ajmp.20180701.14
Page(s) 31-33
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Photo Detector, Microchannel Plate, Numerical Simulation

References
[1] A. J. Guest, A computer model of channel multiplier plate performance, Acta Electronica, 14 (1971) pp. 79-97. R. G. Lye, A. J. Dekker, Theory of secondary emission, Phys. Rev. 107 (1957) 977-981.
[2] M. Ito, H. Kume, K. Oba, Computer analysis of the timing properties in micro channel plate photomultiplier tubes, IEEE Trans. NS-31 (1984) 408-412.
[3] Z. Insepov, V. Ivanov, H. Frisch, Comparison of Candidate Secondary Electron Emission Materials, NIM B, 268 (2010) 3315-3320.
[4] V. Ivanov, Z. Insepov, S. Antipov, Gain and Time Resolution Simulations in Saturated MCP Pores, NIM A, 52549 (2010) 02291-6.
[5] Z. Insepov, V. Ivanov, S. J. Jokela, I. Veryovkin, A. Zinovev, H. Frisch, Comparison of Secondary Electron Emission Simulation to Experiment, NIM A, 52549 (2010).
[6] A. Barnyakov et al. R&D of microchannel plate phototubes. NIM A, 567 (2006) 17-20.
[7] A. Barnyakov et al. Investigation & development of microchannel plate phototubes. NIM A, 572 (2007) 404-407.
[8] V. Ivanov, A. Barnyakov, M. Barnyakov, V. Bobrovnikov, I. Ovtin. Numerical simulations of fast photo detectors based on microchannel plates. J of Instrumentation, 12 (2017) P09024.
[9] V. Ivanov, A. Barnyakov et al. Numerical simulation of fast photo detectors based on microchannel plates. Int. Conf. “Instrumentation for Colliding Beam Physics”, 28 Feb.–3 Mar., 2017, Novosibirsk, Russia.
[10] V. Ivanov. Computational methods, optimization and synthesis in electron optics.- Hmbg: Palmarium Academic Publishing, 2016.-525 pp.
[11] V. Ivanov. Numerical solution of integral equations of the potential theory in electron optics. PhD Thesis, Computing Center of RAS, 1975, Novosibirsk, Russia.
[12] V. Ivanov. Computer Aided Design of Physical Electronic Devices. P. 1. Numerical methods of the field Calculations. Institute of Mathematics of RAS, Novosibirsk, 1986.-194 PP.
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  • APA Style

    Valentin Ivanov, Igor Turchanovsky. (2017). Influence of the Fringe Fields in Microchannel Amplifiers Design. American Journal of Modern Physics, 7(1), 31-33. https://doi.org/10.11648/j.ajmp.20180701.14

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    ACS Style

    Valentin Ivanov; Igor Turchanovsky. Influence of the Fringe Fields in Microchannel Amplifiers Design. Am. J. Mod. Phys. 2017, 7(1), 31-33. doi: 10.11648/j.ajmp.20180701.14

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    AMA Style

    Valentin Ivanov, Igor Turchanovsky. Influence of the Fringe Fields in Microchannel Amplifiers Design. Am J Mod Phys. 2017;7(1):31-33. doi: 10.11648/j.ajmp.20180701.14

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  • @article{10.11648/j.ajmp.20180701.14,
      author = {Valentin Ivanov and Igor Turchanovsky},
      title = {Influence of the Fringe Fields in Microchannel Amplifiers Design},
      journal = {American Journal of Modern Physics},
      volume = {7},
      number = {1},
      pages = {31-33},
      doi = {10.11648/j.ajmp.20180701.14},
      url = {https://doi.org/10.11648/j.ajmp.20180701.14},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20180701.14},
      abstract = {Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.},
     year = {2017}
    }
    

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    T1  - Influence of the Fringe Fields in Microchannel Amplifiers Design
    AU  - Valentin Ivanov
    AU  - Igor Turchanovsky
    Y1  - 2017/12/14
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    T2  - American Journal of Modern Physics
    JF  - American Journal of Modern Physics
    JO  - American Journal of Modern Physics
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    UR  - https://doi.org/10.11648/j.ajmp.20180701.14
    AB  - Description of mathematical model for the fringe fields in photo detectors based on microchannel plates (MCP) is given. Normally the fringe field calculation requires complex and time-consuming computations using three-dimensional commercial codes. The original semi-analytic model suggested in the paper. This model is based on the mapping procedure for pre-calculated universal fringe field patterns for channels with specific values of the diameter and applied voltages. A fast algorithm can be used for metal channels with metal deposition on the edge and without it. Comparisons of numerical and experimental data are given. The dependencies of major device parameters vs. of applied voltage, pore size, and magnetic field magnitude have been studied.
    VL  - 7
    IS  - 1
    ER  - 

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Author Information
  • Department of High-Performance Computing, Institute of Computational Technologies, Novosibirsk, Russia

  • Department of High-Performance Computing, Institute of Computational Technologies, Novosibirsk, Russia

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