Best Performance of n<sup>+</sup> - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Huynh Van Cong; Paul Blaise; Olivier Henri-Rousseau

doi:doi:10.11648/j.ajmp.20190802.12

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Best Performance of n⁺ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I

Huynh Van Cong, Paul Blaise, Olivier Henri-Rousseau

Published in American Journal of Modern Physics (Volume 8, Issue 2)

Received: 5 June 2019 Accepted: 10 July 2019 Published: 24 July 2019

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Abstract

The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density J_Eo(J_Bo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n⁺ - p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: J_o≡J_Eo + J_Bo, were investigated. For that, we used an effective Gaussian donor-density profile to determine J_Eo, and an empirical method of two points to investigate the ideality factor n, short circuit current density J_sc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage V_oc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained J_Eo-results were accurate within 1.78%. This accurate expression for J_Eo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for J_sc, 7.1% for FF, and 5% for η, suggesting thus an accuracy of J_Bo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the E_gi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the E_gi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donor-size effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%%≃31.55%, coming from the fact that the two obtained limiting J_o-values are almost the same.

Published in	American Journal of Modern Physics (Volume 8, Issue 2)
DOI	10.11648/j.ajmp.20190802.12
Page(s)	18-36
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2019. Published by Science Publishing Group

Keywords

Donor (Acceptor)-Size Effect, Heavily Doped Emitter Region, Ideality Factor, Open Circuit Voltage, photovoltaic Conversion Efficiency

References

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Huynh Van Cong, Paul Blaise, Olivier Henri-Rousseau. (2019). Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. American Journal of Modern Physics, 8(2), 18-36. https://doi.org/10.11648/j.ajmp.20190802.12

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Huynh Van Cong; Paul Blaise; Olivier Henri-Rousseau. Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. Am. J. Mod. Phys. 2019, 8(2), 18-36. doi: 10.11648/j.ajmp.20190802.12

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AMA Style

Huynh Van Cong, Paul Blaise, Olivier Henri-Rousseau. Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. Am J Mod Phys. 2019;8(2):18-36. doi: 10.11648/j.ajmp.20190802.12

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@article{10.11648/j.ajmp.20190802.12,
  author = {Huynh Van Cong and Paul Blaise and Olivier Henri-Rousseau},
  title = {Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I},
  journal = {American Journal of Modern Physics},
  volume = {8},
  number = {2},
  pages = {18-36},
  doi = {10.11648/j.ajmp.20190802.12},
  url = {https://doi.org/10.11648/j.ajmp.20190802.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20190802.12},
  abstract = {The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density JEo(JBo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n+ - p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: Jo≡JEo + JBo, were investigated. For that, we used an effective Gaussian donor-density profile to determine JEo, and an empirical method of two points to investigate the ideality factor n, short circuit current density Jsc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage Voc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained JEo-results were accurate within 1.78%. This accurate expression for JEo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for Jsc, 7.1% for FF, and 5% for η, suggesting thus an accuracy of JBo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the Egi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the Egi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donor-size effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%%≃31.55%, coming from the fact that the two obtained limiting J_o-values are almost the same.},
 year = {2019}
}

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TY  - JOUR
T1  - Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I
AU  - Huynh Van Cong
AU  - Paul Blaise
AU  - Olivier Henri-Rousseau
Y1  - 2019/07/24
PY  - 2019
N1  - https://doi.org/10.11648/j.ajmp.20190802.12
DO  - 10.11648/j.ajmp.20190802.12
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 18
EP  - 36
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20190802.12
AB  - The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density JEo(JBo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n+ - p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: Jo≡JEo + JBo, were investigated. For that, we used an effective Gaussian donor-density profile to determine JEo, and an empirical method of two points to investigate the ideality factor n, short circuit current density Jsc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage Voc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained JEo-results were accurate within 1.78%. This accurate expression for JEo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for Jsc, 7.1% for FF, and 5% for η, suggesting thus an accuracy of JBo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the Egi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the Egi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donor-size effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%%≃31.55%, coming from the fact that the two obtained limiting J_o-values are almost the same.
VL  - 8
IS  - 2
ER  -

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Author Information

Huynh Van Cong

Department of Physics, Laboratory of Mathematics and Physics, University of Perpignan, Perpignan, France
Paul Blaise

Department of Physics, Laboratory of Mathematics and Physics, University of Perpignan, Perpignan, France
Olivier Henri-Rousseau

Department of Physics, Laboratory of Mathematics and Physics, University of Perpignan, Perpignan, France

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Huynh Van Cong, Paul Blaise, Olivier Henri-Rousseau. (2019). Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. American Journal of Modern Physics, 8(2), 18-36. https://doi.org/10.11648/j.ajmp.20190802.12

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Huynh Van Cong; Paul Blaise; Olivier Henri-Rousseau. Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. Am. J. Mod. Phys. 2019, 8(2), 18-36. doi: 10.11648/j.ajmp.20190802.12

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AMA Style

Huynh Van Cong, Paul Blaise, Olivier Henri-Rousseau. Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I. Am J Mod Phys. 2019;8(2):18-36. doi: 10.11648/j.ajmp.20190802.12

Copy | Download

@article{10.11648/j.ajmp.20190802.12,
  author = {Huynh Van Cong and Paul Blaise and Olivier Henri-Rousseau},
  title = {Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I},
  journal = {American Journal of Modern Physics},
  volume = {8},
  number = {2},
  pages = {18-36},
  doi = {10.11648/j.ajmp.20190802.12},
  url = {https://doi.org/10.11648/j.ajmp.20190802.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajmp.20190802.12},
  abstract = {The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density JEo(JBo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n+ - p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: Jo≡JEo + JBo, were investigated. For that, we used an effective Gaussian donor-density profile to determine JEo, and an empirical method of two points to investigate the ideality factor n, short circuit current density Jsc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage Voc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained JEo-results were accurate within 1.78%. This accurate expression for JEo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for Jsc, 7.1% for FF, and 5% for η, suggesting thus an accuracy of JBo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the Egi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the Egi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donor-size effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%%≃31.55%, coming from the fact that the two obtained limiting J_o-values are almost the same.},
 year = {2019}
}

Copy | Download

TY  - JOUR
T1  - Best Performance of n+ - p Crystalline Silicon Junction Solar Cells at 300 K, Due to the Effects of Heavy Doping and Impurity Size. I
AU  - Huynh Van Cong
AU  - Paul Blaise
AU  - Olivier Henri-Rousseau
Y1  - 2019/07/24
PY  - 2019
N1  - https://doi.org/10.11648/j.ajmp.20190802.12
DO  - 10.11648/j.ajmp.20190802.12
T2  - American Journal of Modern Physics
JF  - American Journal of Modern Physics
JO  - American Journal of Modern Physics
SP  - 18
EP  - 36
PB  - Science Publishing Group
SN  - 2326-8891
UR  - https://doi.org/10.11648/j.ajmp.20190802.12
AB  - The effects of heavy doping and donor (acceptor) size on the hole (electron)-minority saturation current density JEo(JBo), injected respectively into the heavily (lightly) doped crystalline silicon (Si) emitter (base) region of n+ - p junction, which can be applied to determine the performance of solar cells, being strongly affected by the dark saturation current density: Jo≡JEo + JBo, were investigated. For that, we used an effective Gaussian donor-density profile to determine JEo, and an empirical method of two points to investigate the ideality factor n, short circuit current density Jsc, fill factor (FF), and photovoltaic conversion efficiency η, expressed as functions of the open circuit voltage Voc, giving rise to a satisfactory description of our obtained results, being compared also with other existing theoretical-and-experimental ones. So, in the completely transparent and heavily doped (P-Si) emitter region, CTHD(P-Si)ER, our obtained JEo-results were accurate within 1.78%. This accurate expression for JEo is thus imperative for continuing the performance improvement of solar cell systems. For example, in the physical conditions (PCs) of CTHD (P-Si) ER and of lightly doped (B-Si) base region, LD(B-Si)BR, we obtained the precisions of the order of 8.1% for Jsc, 7.1% for FF, and 5% for η, suggesting thus an accuracy of JBo (≤ 8.1%). Further, in the PCs of completely opaque and heavily doped (S-Si) emitter region, COHD(S-Si)ER, and of lightly doped (acceptor-Si) base region, LD(acceptor-Si)BR, our limiting η-results are equal to: 27.77%,…, 31.55%, according to the Egi-values equal to: 1.12eV ,…, 1.34eV, given in various (B,…, Tl)-Si base regions, respectively, being due to the acceptor-size effect. Furthermore, in the PCs of CTHD (donor-Si) ER and of LD(Tl-Si)BR, our maximal η-values are equal to: 24.28%,…, 31.51%, according to the Egi-values equal to: 1.11eV ,…, 1.70eV, given in various (Sb,…, S)-Si emitter regions, respectively, being due to the donor-size effect. It should be noted that these obtained highest η-values are found to be almost equal, as: 31.51%%≃31.55%, coming from the fact that the two obtained limiting J_o-values are almost the same.
VL  - 8
IS  - 2
ER  -

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