Modeling of Radiation Effects in the MIS Devices

Galina Zayats; Alexandr Komarov; Fadei Komarov; Sergei Miskiewicz

doi:doi:10.11648/j.nano.20170501.12

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Modeling of Radiation Effects in the MIS Devices

Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz

Published in American Journal of Nano Research and Applications (Volume 5, Issue 1)

Received: 9 March 2017 Accepted: 28 March 2017 Published: 19 April 2017

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Abstract

We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.

Published in	American Journal of Nano Research and Applications (Volume 5, Issue 1)
DOI	10.11648/j.nano.20170501.12
Page(s)	7-11
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Ionizing Irradiation, Space Charge, Surface States, Numerical Simulation, MIS

References

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[2]	V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in Integrated Circuits. Energoatomizdat, Moscow, 1988. [in Russian].
[3]	J. P. Mitchell, ”Radiation-Induced Space-Charge Buildup in MOS Structures”, IEEE Trans. Electron Dev. 1967. Vol. 14, no. 11. P. 764-774.
[4]	J. N. Churchill, F. E. Holstrom, and T. W. Collins, “Dynamic model for e-beam irradiation of MOS capacitors”, J. Appl. Phys. 1979. Vol. 50, № 6. P. 3094–4002.
[5]	V. A. Gyrtov, A. N. Nazarov, N. Travkov, “Modeling of the process of space charge accumulation in MIS insulators of structures upon irradiation”, Fizika I technika poluprovodnikov [Semiconductors]. 1990, Vol. 24, no. 6. P. 969-977.
[6]	M. N. Levin, A. V. Tatarintsev, V. A. Makarenko V. A., V. R. Gitlin, “X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling”, Russ. Microelectronics. 2006, Volume 35, Issue 5, pp 329–336.
[7]	D. A. Buchanan, “On the generation of interface states from electron-hole recombination in metaloxidesemi-conductor capacitors”, Appl. Phys. Lett. 1994. Vol. 65, №10. P. 1257–1259.
[8]	O. V. Aleksandrov, S. A. Visotskaya, V. S. Zhurkin, “Model of charge of accumulation in MOS-transistors at ionizing irradiation”, Izvestiya St. Petersburg State Electrotechnical University ”LETI“. 2012, no. 7. P. 20–27.
[9]	O. V. Aleksandrov, “Model of the behavior of MOS structures under ionizing irradiation”, Semiconductors. 2014. Vol. 48, issue 4. P. 505-510.
[10]	V. Rusanovschi, A. Avram, “Numeric modeling and analytical solution of ionizing irradiation induced charge in MOSFET structure oxide”. In: ISETS’14. The conference proceedings of 11th International Symposium on Electronics and Telecomunications, Timisoara, Romania. Timişoara: IEEE, 2014, pp. 29-32.
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[13]	H. E. Boesch, F. B. McLean, J. M. Benedetto, and J. M. McGarrity, “Saturation of Threshold Voltage Shift in MOSFET’s at High Total Dose”, IEEE Trans. Nucl. Sci. 1986, vol. 33, no. 6, pp. 1191–1197.
[14]	G. M. Zayats, F. F. Komarov, A. F. Komarov, S. A. Miskiewicz, “Simulation of inffluence of low-intensity space ionizing radiation on the MIS charge state”. Reports of NAS of Belarus. 2013. V. 57, no. 3. Pp. 53–57. [in Russian].
[15]	P. J. MCWhorter, S. L. Miller, W. M. Miller, “Modeling the anneal of radiation-induced trapped holes in a varying thermal environmen”. IEEE Trans. Nuclear Physics. 1990. V. 37, no. 6. Pp. 1682–1689.
[16]	A. A. Samarskij, Theory of Difference Schemes. Nauka, Moscow, 1989. [in Russian].
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[18]	J. M. Benedetto, and H. E. Boesch, “The Relationship between Co60 and 10-keV X-ray Damage in MOS Devices”, IEEE Trans. Nucl. Sci. 1986, vol. 33, no. 6, pp. 1318–1323.
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APA Style

Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz. (2017). Modeling of Radiation Effects in the MIS Devices. American Journal of Nano Research and Applications, 5(1), 7-11. https://doi.org/10.11648/j.nano.20170501.12

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ACS Style

Galina Zayats; Alexandr Komarov; Fadei Komarov; Sergei Miskiewicz. Modeling of Radiation Effects in the MIS Devices. Am. J. Nano Res. Appl. 2017, 5(1), 7-11. doi: 10.11648/j.nano.20170501.12

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AMA Style

Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz. Modeling of Radiation Effects in the MIS Devices. Am J Nano Res Appl. 2017;5(1):7-11. doi: 10.11648/j.nano.20170501.12

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@article{10.11648/j.nano.20170501.12,
  author = {Galina Zayats and Alexandr Komarov and Fadei Komarov and Sergei Miskiewicz},
  title = {Modeling of Radiation Effects in the MIS Devices},
  journal = {American Journal of Nano Research and Applications},
  volume = {5},
  number = {1},
  pages = {7-11},
  doi = {10.11648/j.nano.20170501.12},
  url = {https://doi.org/10.11648/j.nano.20170501.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20170501.12},
  abstract = {We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.},
 year = {2017}
}

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TY  - JOUR
T1  - Modeling of Radiation Effects in the MIS Devices
AU  - Galina Zayats
AU  - Alexandr Komarov
AU  - Fadei Komarov
AU  - Sergei Miskiewicz
Y1  - 2017/04/19
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.20170501.12
DO  - 10.11648/j.nano.20170501.12
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 7
EP  - 11
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20170501.12
AB  - We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.
VL  - 5
IS  - 1
ER  -

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Author Information

Galina Zayats

Institute of Mathematics, Academy of Sciences of Belarus, Minsk, Belarus
Alexandr Komarov

Institute of Applied Physics Problems, Minsk, Belarus
Fadei Komarov

Institute of Applied Physics Problems, Minsk, Belarus
Sergei Miskiewicz

Institute of Applied Physics Problems, Minsk, Belarus

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APA Style

Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz. (2017). Modeling of Radiation Effects in the MIS Devices. American Journal of Nano Research and Applications, 5(1), 7-11. https://doi.org/10.11648/j.nano.20170501.12

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ACS Style

Galina Zayats; Alexandr Komarov; Fadei Komarov; Sergei Miskiewicz. Modeling of Radiation Effects in the MIS Devices. Am. J. Nano Res. Appl. 2017, 5(1), 7-11. doi: 10.11648/j.nano.20170501.12

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AMA Style

Galina Zayats, Alexandr Komarov, Fadei Komarov, Sergei Miskiewicz. Modeling of Radiation Effects in the MIS Devices. Am J Nano Res Appl. 2017;5(1):7-11. doi: 10.11648/j.nano.20170501.12

Copy | Download

@article{10.11648/j.nano.20170501.12,
  author = {Galina Zayats and Alexandr Komarov and Fadei Komarov and Sergei Miskiewicz},
  title = {Modeling of Radiation Effects in the MIS Devices},
  journal = {American Journal of Nano Research and Applications},
  volume = {5},
  number = {1},
  pages = {7-11},
  doi = {10.11648/j.nano.20170501.12},
  url = {https://doi.org/10.11648/j.nano.20170501.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20170501.12},
  abstract = {We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Modeling of Radiation Effects in the MIS Devices
AU  - Galina Zayats
AU  - Alexandr Komarov
AU  - Fadei Komarov
AU  - Sergei Miskiewicz
Y1  - 2017/04/19
PY  - 2017
N1  - https://doi.org/10.11648/j.nano.20170501.12
DO  - 10.11648/j.nano.20170501.12
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 7
EP  - 11
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20170501.12
AB  - We describe space-time evolution of electric charge induced in dielectric layer of simulated metal-insulator-semiconductor structures produced by irradiation with X-rays. The purpose of this article is to develop a model which most fully describes the phenomena occurring under the ionizing irradiation of MOS structures. For this, in addition to known processes, such as a generation of the electron-hole pairs in the dielectric volume, diffusion and drift in the electric field of mobile charge carriers (electrons and holes), capture holes at the traps and recombination of electrons with the trapped holes, we also took into account the formation of surface states. The mathematical model considered includes the continuity equations for free electrons and holes, the Poisson equation, the equation describing the kinetics of hole-charge accumulation at trap levels, and the equation describing the tunneling mechanism of discharge of the charge accumulated in the dielectric. The model developed makes it possible to simulate the processes of charge degradation of silicon structures by the effect of ionizing radiation, and to determine the change in the threshold voltage of the MIS structure under irradiation, the distribution of free and trapped charges in the dielectric, and the distribution of the electric field strength. The type of dose dependence of the change in the threshold voltage of the MIS structure is determined by a number of parameters: the concentration of the traps in the oxide, their distribution over the oxide thickness, the mobility and capture cross sections for electrons and holes, the nature of dependence of these parameters on the electric field in the oxide. The system of equations is solved iteratively by efficient numerical method. The obtained simulation results are in good agreement with the corresponding data presented in other scientific publications.
VL  - 5
IS  - 1
ER  -

Copy | Download